The relative permittivity of a material is a measure of how much the material can store electric potential energy. Germanium has a higher relative permittivity than diamond because germanium has more free charge carriers (due to its intrinsic semiconductor properties) that can contribute to the overall permittivity. In contrast, diamond is a pure covalent material with no free charge carriers, resulting in a lower relative permittivity.
The relative permittivity (dielectric constant) of a material depends on several factors, including its atomic structure and bonding. Germanium has a higher relative permittivity than diamond because Germanium has a higher electron density and stronger electron-electron interactions, leading to a higher polarization of the material in an electric field compared to diamond. This results in a higher relative permittivity for Germanium.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
Diamond does not streak. Anything with a Mohs hardness greater than about 7 will cut the ceramic plate used for the test. Diamond, the hardest naturally occurring substance, has a Mohs hardness of 10. (Nothing else in nature comes close.)
The relative density in water refers to how dense a substance is compared to water. If the relative density is greater than 1, the substance will sink in water. If the relative density is less than 1, the substance will float in water.
The relative permittivity (dielectric constant) of a material depends on several factors, including its atomic structure and bonding. Germanium has a higher relative permittivity than diamond because Germanium has a higher electron density and stronger electron-electron interactions, leading to a higher polarization of the material in an electric field compared to diamond. This results in a higher relative permittivity for Germanium.
Germanium has a greater first ionization energy than gallium because germanium has a smaller atomic size and thus a stronger nuclear charge, making it more difficult to remove an electron. Additionally, the electronic configuration of germanium (4d^10 5s^2 5p^2) is more stable compared to gallium (4d^10 5s^2 5p^1), resulting in a higher ionization energy.
The symbol 'A' indicates that this device is made from germanium . as you may know germanium has less cut in voltage so this device is used for low power signal or for signal processing. also the leakage current or reverse saturation current of germanium is greater than silicon.
because its size is big and hence have greater tendency to accept electrons.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
Though germanium diodes were the first ones fabricated, several factors make silicon the choice vs. germanium diodes. Silicon diodes have a greater ease of processing, lower cost, greater power handling, less leakage and more stable temperature characteristics than germanium diodes. Germanium diodes' lower forward drop (.2V to .3V versus .7V to 1.0V) make them better at small signal detection and rectification.
Beryllium has greater ionization energy, with 899 kJ/mol versus Germanium's 762 kJ/mol. The general trend (most prominently displayed in the representative elements) in the periodic table is increasing ionization energy across a period, and decreasing ionization energy down a group.
whith a blood alcohol level at .15%, the relative risk of causing a collision is greater by mearly?
Selenium has a lower electron affinity than germanium. Electron affinity is the energy released when an atom gains an electron to form a negative ion. In general, electron affinity tends to decrease as you move down a group in the periodic table, which is why selenium has a lower electron affinity than germanium.
Silicon has a higher operating temperature and greater thermal stability compared to germanium. Silicon has a larger bandgap energy which makes it better suited for high-power applications. Germanium has a higher electron mobility which can result in faster transistors, but it is less commonly used in modern semiconductor devices.
Condensation Increases with relative HUMIDITY.
Four reasons. First, it is a LOT cheaper and easier to get silicon. Germanium is a trace element in rocks. You need to mine and process lots of rock to get any germanium. Silicon is also known as sand--very easy to find. Second, germanium is heat sensitive. It's harder to solder a germanium device in than a silicon one because the heat can mess up the germanium. Germanium devices pretty much have to be soldered in by hand because you have to heat sink them, whereas silicon devices can be soldered in a soldering machine. Third, germanium's hazardous and silicon is generally not. People eat off glass plates, which are made from silicon. They do NOT eat from germanium plates, if they could even afford them. And fourth, germanium has a variable voltage drop--the higher the voltage, the greater the drop. If you pump 5000 volts into a silicon diode, you're going to get 4999.3v out the other side.