0
The current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.
At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
The reverse saturation current of a germanium (Ge) diode is the current that flows when the diode is in reverse bias and no significant forward current is present. It is caused by thermally generated minority charge carriers in the diode. This current is typically in the range of microamps to milliamps for Ge diodes.
Add your answer:
Earn +20 pts
Practical of to determine energy band gap of semiconductor diode by determining variation of saturation current with temperature?
To determine the energy band gap of a semiconductor diode, you can plot the natural log of the saturation current against the inverse of temperature. By analyzing the slope of this plot using the equation for diode current and adjusting for temperature effects, you can calculate the energy band gap. This method is based on the relationship between current density and temperature in semiconductor devices.
What is the typical value of the barrier potential for a silicon diode?
Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.
Why we can't use silicon and germanium in laser diode?
Silicon and germanium are indirect bandgap materials, which means they are not efficient in emitting light when an electric current passes through them. Laser diodes require direct bandgap materials such as gallium arsenide or indium phosphide, which are more efficient in converting electrical energy into light.
What high profile brands does GE own?
GE owns high-profile brands such as GE Healthcare, GE Aviation, and GE Renewable Energy. These brands operate in various industries including healthcare, aviation, and renewable energy solutions.
How many lone pairs does Ge have?
Germanium (Ge) has 2 lone pairs of electrons.
Practical of to determine energy band gap of semiconductor diode by determining variation of saturation current with temperature?
To determine the energy band gap of a semiconductor diode, you can plot the natural log of the saturation current against the inverse of temperature. By analyzing the slope of this plot using the equation for diode current and adjusting for temperature effects, you can calculate the energy band gap. This method is based on the relationship between current density and temperature in semiconductor devices.
What are the difference between Ge and Si diode?
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
What is value of dynamic resistance oe p-n junction diode?
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode
Mention cut-in-voltage for Si and Ge diode?
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
What is the Difference between Si and Ge diodes?
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
Which has higher leakage current-Si or Ge?
Ge
What is the typical value of the barrier potential for a silicon diode?
Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.
What is more referred to use si diode or a ge diode?
Silicon (Si) diodes are more commonly used than germanium (Ge) diodes. Silicon diodes are preferred for most applications due to their higher temperature tolerance, lower leakage current, and greater availability. They are commonly used in rectifiers, signal processing, and various electronic circuits. Germanium diodes, while having some advantages in specific applications (such as lower forward voltage drop), are less common in modern electronics.
What are diodes and transistors?
A diode allows current to pass in one direction only, and has two pins - Anode and Cathode. A transistor is a switch that has three pins - Collector, Base, Emitter, and a current can pass between the collector and emitter if there is a current on the base. A picture of diodes and transistors can be found here (left to right: diode, transistor, transistor, LED - diode that lights up): http://www.mediafire.com/imageview.php?quickkey=zmwz5and0lm&thumb=6
What is meant by cut off voltage in diode?
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
Is it true that GE finance is going bankrupt?
"No GE finance is not going bankrupt. A few years ago GE finance was close to bankruptcy, but they were able to reverse course and continue to thrive as a business."
Who is the current GE CEO?
Jeffrey Immelt ... I think
