The terminals on a MOSFET are called the "Source", "Drain", and "Gate". Just as with a bipolar junction transistor (BJT) the direction of current flow will be based on the doping configuration of the semiconductor. In a MOSFET, the doping configuration can be either n-channel or p-channel, but with MOSFETS, they also come in a "normally on" or "normally off" configuration, which is specified by being either "depletion mode" or "enhancement mode", respectively.
(Electronics) Resistor placed in the emitter lead of a transistor circuit to minimize the effects of temperature on the emitter-base junction resistance and its resistance is called swamping resistance.
When the out from a transistor is the exact replic of the input signal then it is called unmodulated signal i e. there will not be any change in frequency voltage power etc
If you know the base of the transistor, and you have an ohmmeter that puts out more than about 0.7 volts, you can check base to emitter or base to collector as if it were a diode, and it will conduct when the more positive lead of the ohmmeter is connected to the P junction. That will tell you if the transistor is NPN or PNP. If you don't know the base, you can check all six directions. Only two should conduct, the two that are forward biased towards the base.
Asking about biasing of the emitter alone does not make sense. When you talk about bias, you talk about a junction, such as emitter-base or emitter-collector or base-collector. In a bipolar junction transistor (BJT) both the emitter-base and emitter-collector need to be forward biased, otherwise you are operating the BJT in cutoff mode. Certainly, if you intend to operate the BJT as a switch, then reverse bias for emitter-base (actually, zero bias) could well be one of the valid states, corresponding to a cutoff condition for emitter-collector. However, operation in linear mode, the other normal way to use a BJT, requires that both the emitter-base and the emitter-collector be forward biased. Of course, depending on the ratio of emitter-base to emitter-collector versus hFe, you could also be saturated, which is a non-linear mode, i.e. an on switch.
Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
In an NPN transistor an emiter follower refers to an amplifier topology. The emiter follower configuration is when the emitter of a N-Type Bipolar Junction Transistor (BJT) is connected to the common point on a circuit (typically ground). This is not always the case, however, because many amplifier configuration exist.
Transistor is called Bi-Polar device because the current can be flow due to electron and holes, hence it is called bipolar.
Because the insulation between the gate and the channel is only a reverse biased PN junction. If this junction were to become forward biased the jfet would no longer operate as a transistor at those times.
Because in this device the resistance between two terminal respectively collector and emitter is changed by changing the base voltage that is it transfers the resistance between emitter and collector therefore it is called as TRANSISTOR. (TRANSFER OF RESISTOR)
in bipolar transistors it is called the basein field effect transistors it is called the channel
In the switching transistor the output current is controlled by the (current) and this is also called current controlled current device (CCCD). But in ordinary switch we controlled output current physically...
The FET is a semiconductor device with the output current controlled by an electric field. Since the current is carried predominantly by one type of carriers, the FET is known as a unipolar transistor.
No.Di, or bi, means two. A diode, from the Greek di (two), and ode (path), has, rather obviously, two connections, which, in older ones (valves/thermionic diodes), were called electrodes.A transistor has three connections (so it would make, at least grammatic, sense to call it a triode).
A BJT (bipolar junction transistor) is a general term that includes both NPN and PNP transistors. An NPN transistor has a layer of P-type semiconductor sandwiched between two N-type layers, allowing current to flow from the collector to the emitter when a small current is applied to the base.
The terminals on a MOSFET are called the "Source", "Drain", and "Gate". Just as with a bipolar junction transistor (BJT) the direction of current flow will be based on the doping configuration of the semiconductor. In a MOSFET, the doping configuration can be either n-channel or p-channel, but with MOSFETS, they also come in a "normally on" or "normally off" configuration, which is specified by being either "depletion mode" or "enhancement mode", respectively.
Field Effect Transistors (both JFET & MOSFET) are unipolar because they use only one type of current carrier (electrons in N-channel or holes in P-channel), unlike bipolar transistors (both junction & the obsolete point contact) which always use both types of current carriers.