PN junction: putting a P-type material next to N-type material to form the PN junction.
P-type is where you have more "holes"; N-type is where you have more electrons in the material. Initially, when you put them together to form a junction, holes near the junction tends to "move" across to the N-region, while the electrons in the N-region drift across to the p-region to "fill" some holes. This current will quickly stop as the potential barrier is built up by the migrated charges. So in steady state no current flows.
Then now when you put a potential different across the terminals you have two cases:
1. +ve end to P-type, -ve end to N-type: The electric field from the external potential different can easily overcome the small internal field (in the so-called depletion region, created by the initial drifting of charges): usually anything bigger than 0.6V would be enough. The external field then attracts more e- to flow from n-region to p-region and more holes from p-region to n-region and you have a forward biased situation. the diode is ON.
2. +ve end to N-type, -ve end to P-type: in this case the external field pushes e- back to the n-region while more holes into the p-region, as a result you get no current flow. Only the small number of thermally released minority carriers (holes in the n-type region and e- in the p-type region) will be able to cross the junction and form a very small current, but for all practical purposes, this can be ignored.
of course if the reverse biased potential is large enough you get avalanche break down and current flow in the opposite direction. In many cases, except for Zener diodes, you most likely will destroy the diode.
limts of operating a p-n junction
Yes.
It means that the semi conductor have only one pn junction
two jun. b/w three layer of either pnp or npn
because that the tunnel diode is a standard pn junction diode in many respect except its highly doped pn junction so it has some characteristics in the negative resistance region another that its a standard diode
I cannot think of any, but a pn junction is a part of a diode and has a rectifying properties.
A pn junction can be formed by bringing the p and n type materials together.
the material in which using for doping is already neutral.,,so the pn-junction diode also neutral........
The resistance of a forward biased pn junction is zero.
There are 2 type of biasing in PN junction didoe Forward biasing Reverse biasing
no....is n't
One
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
limts of operating a p-n junction
As temperature rises more minority carriers are created, causing leakage across the junction to rise. This can cause runaway and eventual destruction of the junction.
We use pn junction diode in rfctification as a rectifier becase it allows current to flow in one direction only, i.e. in forward biase only , and stop current to flow in reverse baised. thats why we use pn junction diode in rectification.