Resistivity is the resistance, in ohms, between the opposite faces of a 1-metre-cube of a material.
For metals, resistivity is in the region of 0.0000001 ohm-metre. For semiconductors, it is much higher - it is in the region of 0.01 ohm-metres.
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The question is actually wrong, they can both have the same resistance if configured differently, the real question should be which has a higher resistivity which is the electrical resistance found in a standard amount of each material. In this case Manganin has a higher resistivity than copper.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Because the energy of electrons transfer from semiconductor to metal side have more energy than the fermi energy of electrons in metal side. That's why these are called hot carrier diodes
We know that electrons are the majority carriers in n type semiconductor and holes are the majority carriers in p type semiconductor. The conductivity of n type is more than p type semiconductor due to mobility of electrons is higher than that of holes.
the binary semiconductors used to make LEDs have forward bias voltages from 1.5V to 6V depending on color (1.5V for IR-red to 6V for blue-UV) because the bandgap voltage of the semiconductor is higher than silicon. This higher bandgap is where the photons generated get their energy from. germanium has a lower forward bias voltage of 0.2V because the bandgap voltage is lower. metal-semiconductor contacts, like point contact diodes and schottky barrier diodes, can have forward bias voltages under 0.1V