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depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..

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Q: Why charge carriers are not present in depletion region of am pn junction?
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Why potential across pn junction is called potential barrier?

The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.


Why depletion region in pn junction is called depletion region?

because charge carriers are depleted there, some electrons from n side have fallen into holes on p side reducing/depleting carriers on both sides.


Why the depletion layer becomes very thick when then pn junction diode is lightly doped?

When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.


What is the depletion layer in a semi conductor?

in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.


What is depletion region in a diode?

As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.