high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode high current gain :-common collector since it is the ratio of Ie/Ib
Kirchoff's current law states that the current in every point in a series circuit is the same. In the case of a transistor in common emitter configuration, you can take advantage of that fact and state that the collector current is equal to the emitter current. The truth is somewhat different, because the gain of the transistor is not infinity, so the base current must be added to the emitter current. With a reasonably high gain, however, you can ignore the base current. Consider that the emitter voltage is related to the base voltage by the forward drop of the base-emitter junction, about 0.7 volts, and the collector and emitter currents are the same. Now look at the collector and emitter resistors. If the currents are the same, and the voltage across the emitter resistor is known, then you know the voltage across the collector resistor as well. This is an application of both Kirchoff's and Ohm's laws. The gain, then, of this amplifer is collector resistance divided by emitter resistance. It is an inverting amplier in this configuration. In some configurations, the emitter resistor is zero ohms. This does not mean the gain is infinity - it now means that the gain is limited by the gain of the transistor, which it is anyway - the emitter resistor is used to stabilize the gain and reduce dependency on individual transistor gains, which do vary.
Class A amplifiers for signals and class AB for power output. The bias is often set up as a self biased amp.
The emitter resistor in a common emitter configuration provides negative feedback to the transistor, reducing both its voltage gain and distortion.
In a voltage follower, voltage gain is 1, with an offset of VB-E, and current gain is hFe, limited, of course, by the available current in the supply and by the rating of the transistor.
high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode high current gain :-common collector since it is the ratio of Ie/Ib
It depends on which transistor. Typical values of hFe range between 50 and 400. It also depends on the configuration of the circuit, with hFe being a limiting factor, and most designs providing a gain less than hFe.
Common Emitter(CE) Configuration possess largest voltage gain among the three(CE CB CC).
amplifiers operated with Common emmitter configuration for bipolar transistors , will give both voltage & current gain . Though equivalent fet & mosfet circuit topologies exist , these amplifiers operate more on signal voltage on input & the signal current is negligible compared to a bipolar transistor.
FETs don't have current gain as no current flows through the gate. The gain of a FET is a voltage gain and is called mu.
Kirchoff's current law states that the current in every point in a series circuit is the same. In the case of a transistor in common emitter configuration, you can take advantage of that fact and state that the collector current is equal to the emitter current. The truth is somewhat different, because the gain of the transistor is not infinity, so the base current must be added to the emitter current. With a reasonably high gain, however, you can ignore the base current. Consider that the emitter voltage is related to the base voltage by the forward drop of the base-emitter junction, about 0.7 volts, and the collector and emitter currents are the same. Now look at the collector and emitter resistors. If the currents are the same, and the voltage across the emitter resistor is known, then you know the voltage across the collector resistor as well. This is an application of both Kirchoff's and Ohm's laws. The gain, then, of this amplifer is collector resistance divided by emitter resistance. It is an inverting amplier in this configuration. In some configurations, the emitter resistor is zero ohms. This does not mean the gain is infinity - it now means that the gain is limited by the gain of the transistor, which it is anyway - the emitter resistor is used to stabilize the gain and reduce dependency on individual transistor gains, which do vary.
A Darlington transistor is a composite transistor. The definition is a combination of two or more transistors that have the purpose of increasing the current gain.
Actually ce configuration is preferred for amplification since it has a current gain of 20-500 and also has appreciable voltage and power gain. It has moderate output to input impedence ratio(about 50).
cc/ce/cb doesn't give the no current gain
Class A amplifiers for signals and class AB for power output. The bias is often set up as a self biased amp.
A: The gain of a transistor is not linear and even that varies from component to component. The gain can vary greatly depending on the Ic current and the load. Manufactures only give out a typical gain for a particular current. As a rule the lower the Ic current the higher the gain. To really find out what a particular transistor characteristics are a tektronik curve tracer is used.
Current gain configuration is the change in collector current divided by the change in the emitter current. Its symbol is hfe, or h-parameter.