reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
When the curent Is in the secundary for the highervalues Ip in the primary coil are not equal proportional than for the lower curent. Is/Ip for lower values is for exemple 100 Is/Ip for higher values are for exemple 70The reason is the magnetique flux saturation in the closed iron core.Roger
When p-n junction of a diode reversed biased then majority carriers are not able to cross the junction and are attracted in respective regions.So current becomes approximately zero.But because of minority carriers a reverse current keeps flowing.It is called Reverse Saturation Current.And due to attraction towards sides,charges go away from junction.So width of depletion reason increases.
The reverse saturation current of a germanium (Ge) diode is the current that flows when the diode is in reverse bias and no significant forward current is present. It is caused by thermally generated minority charge carriers in the diode. This current is typically in the range of microamps to milliamps for Ge diodes.
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
temparature, collector current, reverse saturation current, beta of atransistor
1/T
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
The main reason for produce reverse current in a diode is "MINORITY CARRIERS". For reverse bias diode i.e negative terminal connected to p side and positive to n side the electrons in p side(minority charge carriers) attracted towards the positive polarity i.e towards positive terminal. Hence the current (reverse saturation) flows.Holes also contributed the current by attracting towards negative side.
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Yes, the reverse saturation current in a diode typically increases with temperature. This is due to the increased generation of electron-hole pairs in the depletion region as temperature rises, leading to a higher reverse leakage current.