point contact has the least junction capacitance
The collector base depletion zone is wider than the emitter base depletion zone.
no, 2 junctions. NPN or PNP
Diffusion capacitance is the capacitance due to transport of charge carriers between two terminals of a device. - Amog This diffusion capacitance is due to depletion capacitance which is a function of forward bias applied to emitter junction of a transistor and due to diffusion capacitance which a function of transconductance of the transistor. Its value is 100 pF. Tirupanyam B.V
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
point contact has the least junction capacitance
Junction capacitance is used to take the ripple out of DC circuits primarily. The other is used in voltage doublers or step ups as a storage.
thyristor is four layer three junction device,hence there is effect of the junction capacitance on the operation.thyristor also requires special techniques to make it on and off.along with this the delays produced due to junction capacitance has to be considered.
1. Transition capacitance 2. Diffusion capacitance 3. Space charge capacitance 4. Drift capacitance
The collector base depletion zone is wider than the emitter base depletion zone.
no, 2 junctions. NPN or PNP
The charge inside of a p-n diode with a connected voltage variety yields a capacitance is need to add circuit model of a p-n diode. The capacitance connected with the charge variety in the exhaustion layer is known as the intersection capacitance, in the same process capacitance connected with the abundance bearers in the semi impartial district is known as the dissemination capacitance.
Diffusion capacitance is the capacitance due to transport of charge carriers between two terminals of a device. - Amog This diffusion capacitance is due to depletion capacitance which is a function of forward bias applied to emitter junction of a transistor and due to diffusion capacitance which a function of transconductance of the transistor. Its value is 100 pF. Tirupanyam B.V
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
The space charge region in a pn junction at equilibrium is often made small due to:to obtain a high junction capacitance;since the junction capacitance is inversely proportional to the width of the space charge region, the smaller the width, the larger the junction capacitance.to ensure easy diffusion of charge carriers;if the space charge region is made small, that is, the width is made small, the distance for diffusion also becomes short, then it becomes easy for the electrons to diffuse into the p-side and the holes into the n-side
Transition capacitance : A reverse biased PN-junction has a region of high resistivity (depletion layer) sandwiched in between two regions of relatively low resistivity. The P-N regions act as the plates of a capacitor and the depletion layer acts as the dielectric This is known as the transition capacitance or depletion capacitance. Diffusion capacitance : It is the capacitance due to transport of charge carriers between two terminals of a device like the forward biased PN junction. In a semiconductor device with a current flowing through it (for example, an ongoing transport of charge by diffusion) at a particular moment there is necessarily some charge in the process of transit through the device. If the applied voltage changes to a different value and the current changes to a different value, a different amount of charge will be in transit in the new circumstances. The change in the amount of transiting charge divided by the change in the voltage causing it is the diffusion capacitance. The adjective "diffusion" is used because the original use of this term was for junction http://www.answers.com/topic/diode, where the charge transport was via the diffusion mechanism.