Parasitic capacitances form across every depletion region there's also a capacitance between the conductive leads to the terminals. For simplicity they are usually just lumped to each of the terminals of the transistor. Gate, Drain, Source and Substrate. If substrate is shorted to source creating typical 3 terminal representation then that half of those parasitic capacitances combine and Css (source-substrate) = 0. Cgd Cgs Cds (primarily from drain to substrate, not drain to source)
NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. In a NMOS, carriers are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore, NMOS ICs would be smaller than PMOS ICs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS (which has the same geometry and operating conditions).
yes
it becomes a buffer
bund marao nhi pata
Due to differences in carrier mobility between P and N type semiconductor, for similarly doped channels the channel of a PMOS FET will be a bit wider than the channel of an NMOS FET so that they both have identical channel resistance. To make the channel wider the PMOS FET will take a larger chip area.
PMOS transistors are typically larger than NMOS transistors in CMOS design because the mobility of holes (the charge carriers in PMOS) is lower than that of electrons (the charge carriers in NMOS). This means that a larger current-carrying area is needed in the PMOS to achieve the same performance as the NMOS transistor. By making the PMOS larger, designers can balance the drive strengths of the two types of transistors in a CMOS circuit.
NMOS PLA is a Programmable Logic Array which is designed by employing NMOS technology i.e. by employing nmos transistors to realize the required gates of PLA. PLA is a combination AND gates and OR gates to produced sum of products terms needed for realizing the required combinational logic. It consists of an array of AND gates followed by OR plane. the connections to the AND and OR inputs can be programmed based on our needs.
CMOS and NMOS are two logic families. As the name itself indicates, CMOS is complementary Metal Oxide Semiconductor technology. It uses both PMOS and NMOS transistors for design. Whereas, NMOS logic family uses only NMOS FETs for design.
NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. In a NMOS, carriers are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore, NMOS ICs would be smaller than PMOS ICs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS (which has the same geometry and operating conditions).
The blocks in a logic gate depends on the logic family we use.A logic gate is designed using a specific logic family. The logic families can be DTL, TTL, CMOS etc.The blocks are different for different logic families.The various blocks in various logic families are:Diode logic: diodes and resistorsDTL logic : diodes and resistorsTTL logic : transistors and resistorsNMOS logic: only NMOS FETsPMOS logic: Only PMOS FETsCMOS logic: Both NMOS and PMOS FETsBiCMOS Logic: both transistors and FETs.
These circuits use nMOS for implementation of a whole gate + one pMOS which is connected between positive supply and nMOS.
A p-type substrate is used in NMOS transistors because it provides a foundation for creating the n-channel within the substrate. By creating a p-n junction with the source and drain regions, a conductive channel can be formed in the p-type substrate when a voltage is applied to the gate, allowing current flow between the source and drain.
when n- channel mosfets are used to construct a circuit these are called nmos(N- channel mosfet).
A CMOS logic gate typically consists of 4 to 6 transistors. This includes both NMOS (n-channel metal-oxide-semiconductor) and PMOS (p-channel metal-oxide-semiconductor) transistors that are used in a complementary pair configuration to implement the logical function.
yes
A rest transistor is either a pMOS or nMOS high VT transistor and is utilized as a change to close off force supplies to parts of a configuration in standby mode. The pMOS rest transistor is utilized to switch VDD supply and henceforth is known as a "header switch."
it becomes a buffer