the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
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GE diode is made up of germanium and Si diode is made up of silicon and there is a difference in break down voltages also for Ge it is 0.7v and for Si it is 0.3
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Ge
for germanium it is 0.3 and for silicon it is 0.7
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.