the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
Wiki User
∙ 11y agoWiki User
∙ 12y agoGE diode is made up of germanium and Si diode is made up of silicon and there is a difference in break down voltages also for Ge it is 0.7v and for Si it is 0.3
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Ge
for germanium it is 0.3 and for silicon it is 0.7
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Silicon and germanium are indirect bandgap materials, which means they are not efficient in emitting light when an electric current passes through them. Laser diodes require direct bandgap materials such as gallium arsenide or indium phosphide, which are more efficient in converting electrical energy into light.
Ge
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
Ge (Germanium) and Si (Silicon) are both from group 14 in the periodic table. They are in the same group but not in the same period. Ge is in period 4, while Si is in period 3.