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the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev

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12y ago

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GE diode is made up of germanium and Si diode is made up of silicon and there is a difference in break down voltages also for Ge it is 0.7v and for Si it is 0.3

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13y ago
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Q: What are the difference between Ge and Si diode?
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