I am assuming the charge carries are electron and hole in an semiconductor.
the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor.
the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen.
in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.
Chat with our AI personalities
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
It makes sense for charge carriers to lose energy in a circuit, but I don't think it quite works that way. For example, a voltage doesn't accelerate an electron or other charge carrier at a single point - rather, the force experienced by the charge carriers would be spread out over a larger area.
the flowing in the conductor is related as given by the relation... I=Vena v=drift velocity of electron e=charge on electron n=concentration of electron in the current carrying conductor . a=area
The majority carrier in p-type semiconductor is the hole. Electron carriers in p-type semiconductor are minority carriers. Minority carriers in any semiconductor are produced mainly by heat. Only at absolute zero temperature would there be no minority carriers.
define social constuction define social constuction