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I am assuming the charge carries are electron and hole in an semiconductor.

the mobility of charge carriers can be understood as the easy with which the carrier can move in a semiconductor.

the mobility depends on many factors like the semiconductor material (because of the crystal structure), semiconductor specimen temperature, the effective mass of carrier, the applied electric field across the specimen.

in general if we compare the mobility of electron with hole in a silicon semiconductor, the mobility values at room temperature is some thing around 1350 cm^2 per volt sec and 450 cm^2 per volt sec for electron and holes. that is mobility of electron is 2-3 time more than the holes in silicon.

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15y ago

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Q: How do you Define the mobilty of charge carrier?
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