because semiconductor diodes are not perfect insulators when reverse biased. if you want a diode that is a perfect insulator when reverse biased, use a vacuum tube diode.
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise. photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise. photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise.
because semiconductor diodes are not perfect insulators when reverse biased. if you want a diode that is a perfect insulator when reverse biased, use a vacuum tube diode.
if a diode is in forward biased the diode acts as switch is on and when we apply the diode in reverse biased then it work as the switch as off.
reverse biased
When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time. Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
An N-well in VLSI is a deep zone of highly N-type doped semiconductor, usually used to create reverse biased isolation junctions between components.
A nonconducting diode is biased in the reversed direction (reverse polarization).
A diode when forward biased will allow the flow of current while reverse biasing will cut off the flow of current. It is the basic building block of any semiconductor.
peak inverse voltage... piv of semiconductor is impoetant bcz we need to know after a peak voltage the diode get breakdown or damaged... so we need to know the peak voltage. piv is a point which withstands the maximum reverse biased voltage. after which the diode get damaged.
because reverse biased current is constant upto avalanche breakdown.
Because when reverse biased it behaves like any other rectifier/diode.
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.