Power transistor can conduct large amount of currents through it, more than small signal transistor. power transistor has a vertical structure and small signal transistor has horizontal structure.In power transistor quasi saturation region is present which is absent in the small signal transistor. In power transistor there is a inculsion of drift layer which is not there in the small signal transistor. Power dissipation is less in power transistor and it is more in small signal transistor. b.v.polytechnic,vasai pushkar vaity.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
N-p-n transistor is made by sandwiching thin layer of p-type semiconductor between two layers of n-type semiconductor. It has three terminals, Emitter, Base and collector. The npn transistor has two supplies, one is connected through the emitter base and one through the collector base. The supply is connected such that emitter-base are forward biased and collector base are reverse biased. It means , Base has to be more positive than the emitter and in turn, the collector must be more positive than the base. The current flow in this type of transistor is carried through movement of electrons. Emitter emits electrons which are pulled my the base as it is more positive. these end up in the collector as it is yet more positive. In this way, current flows in the transistor. Transistor can be used as an amplifier, a switch etc.
One capable of being used at power rating of greater than about 10 watts, and generally requiring some means of cooling
There are two semiconductor junctions. Transistors are designated as NPN or PNP and a diode is an NP or PN junction depending on direction of current flow. However, the function of a transistor is different than two back to back diodes.
There were obvious differences between the trasisitor and the vacum tube. The transistor was faster, more reliable, smaller, and much cheaper to build than a vacuum tube. One transmisor was the equivalent 40 vacuum tubes. They also didn't produce heat compare it to a vacuum tubes. Conduct electricity faster and better than vacuum tubes.
In CE transistor volteage divider biasing is used, which is independent of temperature and other parameters.
Power transistor can conduct large amount of currents through it, more than small signal transistor. power transistor has a vertical structure and small signal transistor has horizontal structure.In power transistor quasi saturation region is present which is absent in the small signal transistor. In power transistor there is a inculsion of drift layer which is not there in the small signal transistor. Power dissipation is less in power transistor and it is more in small signal transistor. b.v.polytechnic,vasai pushkar vaity.
That would depend on your application. If there was a singke best way, that would be the only method used.
The answer depends on the type of transistor, how intensively it is used as well as the manufacturer.
If it's a germanium transistor, 0.3 volts. If it's the more common silicon transistor, slightly more than 0.6 volts.
Yes. In simple. Better, newer, more power efficient, smaller transistor sizes etc.
A transistor can be in three conditions or states. It can be active (at a voltage higher than the emitter), in saturation or cut off (no current).
No. The Field Effect Transistor is a different technology than the Bipolar Junction Transistor. That cannot substitute for one another.
A MOSFET (metal oxide semiconductor field effect transistor) can be used INSTEAD of a BJT (bypolar junction transistor, so transistor is redundant in your question), if the circuit in question is modified to allow it and the MOSFET is chosen appropriately. BJT's will usually have a higher intrinsic gain, but have lower input resistance. Also a BJT in general will work better at higher frequencies than a MOSFET (unless you choose a high frequency MOSFET) due to the capacitive nature of MOSFETs.
The PNP switch circuit uses a PNP transistor to control the flow of current based on the input signal. When the input signal is high, the transistor allows current to flow from the collector to the emitter, turning the switch "on". When the signal is low, the transistor blocks current flow, turning the switch "off".
A bipolar junction transistor with 2 or more emitters. The most common use of these was in the input section of transistor transistor logic (TTL) gates. They offered significantly higher speed and used less area on the IC chip than the diodes used in the input section of the diode transistor logic (DTL) gates that came earlier. This made TTL ICs both faster and cheaper than the DTL ICs which soon became obsolete.