The reverse breakdown voltage of the 1N4007 diode is 1000 volts.
maximum forward current in diode IN4007 is 30 amp
The main difference between a 1n4004 and a 1n4007 are in the maximum RMS voltage, the maximum DC blocking voltage and the maximum repetitive peak reverse voltage. These are 280 and 700, 400 and 1000, and 400 and 1000 volts respectively.
diode:= di+ iode di means two,and iode means terminal,,,, diode is two terminal device i.e anode and cathode
it means the entrance point of a diode
The difference in the 1N4007 diode and the 1N4007S diode is the voltage. The 1N4007S has a higher voltage but the meaning of the S is not listed.
The reverse breakdown voltage of the 1N4007 diode is 1000 volts.
general purpose diode with 1000V reverse breakdown.
The 1N4007 is a diode with forward current rating of 1 ampere, and a reverse voltage rating of 1,000 volts.
maximum forward current in diode IN4007 is 30 amp
Well, darling, the only real difference between a 1N4007 and a 1N4005 diode is the maximum repetitive reverse voltage they can handle. The 1N4007 can handle up to 1000 volts, while the 1N4005 can only handle up to 600 volts. So, if you're playing with high voltages, go for the 1N4007, but if you're keeping it low-key, the 1N4005 will do just fine. Happy diode shopping!
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
The main difference between a 1n4004 and a 1n4007 are in the maximum RMS voltage, the maximum DC blocking voltage and the maximum repetitive peak reverse voltage. These are 280 and 700, 400 and 1000, and 400 and 1000 volts respectively.
A 1n4007 is a diode and not a transistor, the 4007 don't really represent anything, the 1n4007 is a axial lead standard recovery rectifier, working peak reverse voltage = 1000V, the forward current for this device = 1 Amp. More data about it can be find in the data sheet.
Highly variable, depending on the type. For example a 1N457 is rated for 79 volts, while a 1N4007 is rated for 1200 volts.
1n4007 is pn junction transistor. it is a non linear device
naming convention as for manufacturing for higher voltage thicker diffusion layer after manufacture can test them to see which group they fall in sometimes we get lucky and the whole batch is those 1000v diodes but you dont want to waste the time in the diffusion oven if you only have 5v costumers