it will control the flow of electrons between the source and drain,the controlling will be depends upon the input voltage to the substrate.
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To make a depletion MOSFET, the channel must be doped with carriers; this is in total opposite to an enhancement MOSFET which avoids carriers in the channel at all cost. (because the carriers in the channel become the subthreshold leakage current) Since you need to pinch the channel against the substrate to guarantee to turn off the channel completely, there must be a reverse bias between the substrate and the source terminal. As a result, the source terminal of an N type depletion MOSFET must be tied to Vdd. This is also a complete opposite to enhancement MOSFET. In order to turn off the channel quickly, the carriers in the channel of depletion MOSFET are usually planted shallowly. This is a drastically different from enhancement MOSFET that carriers must be planted deeply into source terminal in order to support a large diffuse current. The construction of depletion MOSFET thus requires far less diffusion time than enhancement MOSFET.
An enhancement MOSFET doesn't conduct current across the drain to source unless a voltage is applied to the gate. When sufficient voltage is applied to the gate of the transistor, currents flows from drain to source. A MOSFET acts as a switch or amplifier in a circuit.
what is a mosfet amplifier
MOSFET is an acronym standing for Metal Oxide Semiconductor Field Effect Transistor.
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