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An insulated-gate bipolar transistor (IGBT) uses relatively high frequency switching and pulse width modulation (PWM) technology for voltage and current regulation whilst a silicon controlled rectifier (SCR) uses relatively low frequency switching and phase shift technology.

Because of the relatively high frequency of operation, the Transformers used in circuits having IGBT scan be much smaller in size and lighter in weight, therefore overall a IGBT-based power control circuit can be made much smaller in size, lighter in weight, more energy efficient and more cost effective compared to SCR-based control ciruits.

Apart from those advantages, because the cost of manufacturing IGBTs is now lower than SCRs, IGBTs are rapidly replacing SCRs for power control applications.

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