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Breakdown depends on the electric field value in FETS (as in diodes and such, where you can find a junction).
Theoretically, you need to
- dope less the junction region of your device (like p-i-n diodes, the i (intrinsic) region is not doped in order to reduce E field peak, which occurs near the center of the device).
- raise the length of your device
Both of these two solutions will have the drawback of increasing your ON resistance.
At circuit design level, you can protect your devices with clamp diodes or something similar.
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How will you differentiate the diodes whether it is Zener or avalanche when you are given two diodes of rating 6.2 v and 24V?
Oh, what a happy little question! To differentiate between Zener and avalanche diodes, you can look at their voltage ratings. A Zener diode typically has a lower voltage rating, like 6.2V, while an avalanche diode usually has a higher voltage rating, like 24V. Just remember, each diode has its own special purpose and they all bring joy to our electronic landscapes.
Distinguish between zener avalanche effects?
1. Differentiate Zener breakdown from avalanche breakdown? Zener Breakdown Avalanche breakdown 1.This occurs at junctions which being heavily doped have narrow depletion layers 2. This breakdown voltage sets a very strong electric field across this narrow layer. 3. Here electric field is very strong to rupture the covalent bonds thereby generating electronhole pairs. So even a small increase in reverse voltage is capable of producing large number of current carriers. ie why the junction has a very low resistance. This leads to Zener breakdown. 1. This occurs at junctions which being lightly doped have wide depletion layers. 2. Here electric field is not strong enough to produce Zener breakdown. 3. Her minority carriers collide with semi conductor atoms in the depletion region, which breaks the covalent bonds and electron-hole pairs are generated. Newly generated charge carriers are accelerated by the electric field which results in more collision and generates avalanche of charge carriers. This results in avalanche breakdown.
Why jfet called as fet?
FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
What FET stand for?
FET stands for field-effect transistor.
Thermal runaway is not possible in FET because as the temperature of FET increase?
mobility decreases
