Breakdown depends on the electric field value in FETS (as in diodes and such, where you can find a junction).
Theoretically, you need to
- dope less the junction region of your device (like p-i-n diodes, the i (intrinsic) region is not doped in order to reduce E field peak, which occurs near the center of the device).
- raise the length of your device
Both of these two solutions will have the drawback of increasing your ON resistance.
At circuit design level, you can protect your devices with clamp diodes or something similar.
Zener breakdown happens at low voltages, whereas avalanche breakdown happens at higher voltages. So diode with 6.2v is having zener breakdown rest is avalanche breakdown in this case.
1. Differentiate Zener breakdown from avalanche breakdown? Zener Breakdown Avalanche breakdown 1.This occurs at junctions which being heavily doped have narrow depletion layers 2. This breakdown voltage sets a very strong electric field across this narrow layer. 3. Here electric field is very strong to rupture the covalent bonds thereby generating electronhole pairs. So even a small increase in reverse voltage is capable of producing large number of current carriers. ie why the junction has a very low resistance. This leads to Zener breakdown. 1. This occurs at junctions which being lightly doped have wide depletion layers. 2. Here electric field is not strong enough to produce Zener breakdown. 3. Her minority carriers collide with semi conductor atoms in the depletion region, which breaks the covalent bonds and electron-hole pairs are generated. Newly generated charge carriers are accelerated by the electric field which results in more collision and generates avalanche of charge carriers. This results in avalanche breakdown.
FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
FET stands for field-effect transistor.
mobility decreases
effect of temperature on zener & avalanche breakdown
zener breakdown and avalanche breakdown.
Zener breakdown happens at low voltages, whereas avalanche breakdown happens at higher voltages. So diode with 6.2v is having zener breakdown rest is avalanche breakdown in this case.
Ther are generally Two types of Breakdown Phenomenons comes into picture. Namely- 1. Avalanche Breakdown 2. Zener Breakdown.
Silicon "zener diodes" with a zener voltage rating of 5.6V or higher operate mainly by avalanche breakdown, so both the 6.2V and 24V "zener diodes" are avalanche breakdown type (not zener breakdown type).
negative temperature coeeficient
Avalanche is when you surpass the negative bias voltage threshold and the zener breaks, thermal breakdown would be putting too much current or voltage across the zener and burning it out.
Avalanche breakdown in Silicon-Controlled Rectifiers (SCRs) refers to the rapid increase in current flow through the device due to high reverse voltage. This phenomenon occurs when the reverse voltage exceeds the breakdown voltage of the SCR, causing a sudden breakdown of the junction and a rapid increase in current flow. Avalanche breakdown can damage the SCR if not properly controlled.
avalanche
Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents to flow within materials which are otherwise good insulators. It is a type of electron avalanche. The Avalanche process occurs when the carriers in the transition region are accelerated by the electric field to energies sufficient to free e- h pairs via collisions with bond electrons.
1. Differentiate Zener breakdown from avalanche breakdown? Zener Breakdown Avalanche breakdown 1.This occurs at junctions which being heavily doped have narrow depletion layers 2. This breakdown voltage sets a very strong electric field across this narrow layer. 3. Here electric field is very strong to rupture the covalent bonds thereby generating electronhole pairs. So even a small increase in reverse voltage is capable of producing large number of current carriers. ie why the junction has a very low resistance. This leads to Zener breakdown. 1. This occurs at junctions which being lightly doped have wide depletion layers. 2. Here electric field is not strong enough to produce Zener breakdown. 3. Her minority carriers collide with semi conductor atoms in the depletion region, which breaks the covalent bonds and electron-hole pairs are generated. Newly generated charge carriers are accelerated by the electric field which results in more collision and generates avalanche of charge carriers. This results in avalanche breakdown.
explain all the parameters of fet