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In an N-type semiconductor, majority current carriers are electrons, while minority current carriers are holes. In a P-type semiconductor, majority current carriers are holes, while minority current carriers are electrons.
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The majority carrier in p-type semiconductor is the hole. Electron carriers in p-type semiconductor are minority carriers. Minority carriers in any semiconductor are produced mainly by heat. Only at absolute zero temperature would there be no minority carriers.
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In semiconductor devices there are two types of charge carriers: electrons and holes. In N-type doped semiconductor the majority charge carriers are electrons and the minority charge carriers are holes. In P-type doped semiconductor the majority charge carriers are holes and the minority charge carriers are electrons.
Some kinds of semiconductor devices operate using minority charge carriers in part(s) of their structure. The common bipolar junction transistor is one of these, they are sensitive to a phenomenon called thermal runaway because additional minority carriers are produced as temperature increases. (field effect transistors however operate using only majority carriers and are thus not sensitive to thermal runaway)
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Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
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The p-region of a diode contains an abundance of holes, but also contains a small percentage of electrons. Similarly, the n-region also contains a small percentage of holes. These are knows as the minority carriers. Again, like charges repel, so when the diode is reverse biased, these minority carriers will migrate toward the boundary region.
The minority carriers will recombine at the boundary region, and thus enable an electric current. Because these carriers are few in number (orders of magnitude less than the majority carriers), this current is very small. This represents the leakage current of a diode.
The mobility of minority carriers increases with temperature, and heating a diode will cause greater numbers of minority carriers to congregate at the boundary region. This will increase leakage current.
Surface contamination on the diode may also allow small amounts of electricity to be conducted, again causing leakage.
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- bipolar devices use both majority and minority current carriers
- unipolar devices use only majority current carriers
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In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere.
This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
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The P-type semiconductors have a very large percentage of holes.
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FOR n-type semiconductor the majority charge carrier is electron and for n-type semiconductor it is hole.
the majority and minority charge carrier is result of free electron and hole.
the majority charge carrier is responsible for transport of electron.
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When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added.
When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
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Majority charge carriers in the N-type side of a semiconductor material are electrons, because N-type semiconductor is doped with a material with 5 valence electrons. Semiconductor materials have 4 valence electrons and hold tightly to 8, so there is a "loose" electron for every atom of dopant. Therefore most of the charge carriers available are electrons. IE, electrons are the majority charge carriers.
Minority charge carriers in N-type semiconductor are holes. Only a few holes (lack of an electron) are created by thermal effects, hence holes are the minority carriers in N-type material.
The situation is reversed in P-type semiconductor. A material having only 3 valence electrons is doped into the semiconductor. The semiconductor atoms have 4 valence electrons try to hold tightly to 8, so there is a virtual hole created by a "missing" electron in the valence orbit. This acts as if it were a positive charge carrier. Most of the charge carriers are these holes, therefore in P-type semiconductor holes are the majority charge carrier.
Again, reverse situation to minority charge carriers. Some electrons are loosened by thermal effects, they are the minority charge carriers in P-type semiconductor.
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There are two recognized types of charge carriers in
semiconductors. One is
electrons, which carry a negative
electric charge. In addition, it is convenient to treat the traveling vacancies in the
valence bandelectron population (
holes) as the second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron
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When applied voltage is higher in reverse bias condition thermally generated electrons will rupture the bonds and increase the minority carriers
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in FET the conduction is due to the majority carriers. here the minority carrier conduction doesn't takes place as in BJT. hence the current flow depends only on the majority carriers . hence ther is no thermal runaway in FET.
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The number of minority carriers in a semiconductor is directly proportional to temperature.
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In a PN junction diode, the reverse current is due to the diffusive flow of minority electrons from the p-side to the n-side and the minority holes from the n-side to the p-side. Hence IS, reverse saturation current depends on the diffusion coefficient of electrons and holes. The minority carriers are thermally generated so the reverse saturation current is almost unaffected by the reverse bias but is highly sensitive to temperature changes. so , as the temperature increases the density of minority charge carriers increases creating a slight increase in the amount of IC.
so, the inference is reverse current is directly proportional to temperature
In the reverse biased condition the PN diode is least dependent on voltage till certain limit called breakdown voltage, till that voltage the increase in V is not actually increasing the current it is just increasing the heat at the junction which in turn raises the temperature and so the minority charge carriers.
But if the voltage increases the breakdown voltage the pn junction is lost and all the holes and electrons will start acting like charge carriers , such avalanche of charge carriers increases the current sharply to several hundred times. This phenomena is called as zener or avalanche breakdown
so if applied voltage less than breakdown voltage
no significant change in reverse current(only due to minority charge carriers)
and if applied voltage greater than breakdown voltage
the pn junction break and current increases sharply (both due to minority and majority charge carriers)
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PNP
- Operates on minority charge carriers (holes).
- Slower than NPN because holes are less mobile than electrons.
- Slightly easier to manufacture than NPN.
- More sensitive to high temperature due to thermal hole generation.
- etc.
NPN
- Operates on minority charge carriers (electrons).
- Faster than PNP because electrons are more mobile than holes.
- Slightly harder to manufacture than PNP.
- Less sensitive to high temperature.
- etc.
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The main reason for produce reverse current in a diode is "MINORITY CARRIERS". For reverse bias diode i.e negative terminal connected to p side and positive to n side the electrons in p side(minority charge carriers) attracted towards the positive polarity i.e towards positive terminal. Hence the current (reverse saturation) flows.Holes also contributed the current by attracting towards negative side.
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its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
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- emitter, emits minority carriers into the thin base material
- base, controls minority carrier current flow between the emitter and collector
- collector, collects minority carriers that have passed through the thin base material
While the emitter and collector are named for their electronic functions, the base is instead named for its structural function in the first point contact transistor: it was the bottom part of the transistor that structurally supported the other parts (thus the base). However junction transistors are usually not constructed that way, in most modern junction transistors the collector is the bottom part.
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In a photo-diode when light is incident, the fractional increase in the majority carriers is much less than the fractional increase in the minority carriers. Consequently, the fractional change due to the photo-effects on the minority carrier dominated reverse bias current is more easily measurable than the fractional change due to the photo-effects on the majority carrier dominated forward bias current. Hence, photo-diodes are preferred to be used in the reverse bias condition to easily observe the variation of current with intensity.
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Free electrons and holes are the charge carriers-not only in intrinsic semiconductors(these are the purest form of semiconductors-typically as pure as can be made available with the present technology) but also in extrinsic semiconductors(doped semiconductors).
In intrinsic semiconductors,electron-hole pairs are created due to the natural processes like-
- absorption of heat energy from the surroundings
- absorption of energy from photons.
this absorbed energy results in breakdown ofcovalant bonds in intrinsic semiconductors as a result of which electron-hole pairs are created.
It is this electron hole pair which is responsible for carrying the current through the intrinsic semiconductor when a potential difference is applied across it.
In extrinsic semiconductor the case is slightly different-
here, we have-majority charge carriers and minority charge carriers.
in an n-type semiconductor-
majority charge carriers are the electrons contributed by the pentavalent impurities while the minority charge carriers are the holes which are generated as electron-hole pairs due to natural processes discussed above.
in p-type semiconductor-
majority charge carriers are the holes contributed by trivalent impurities
whereas the minority charge carriers are the electronswhich are generated as electron-hole pairs due to natural processes discussed above.
these are the majority charge carriers which contribute heavily in the flow of current through the extrinsic semiconductors than the minority charge carriers.
I suggest you to please go through mass action law and law of electrical neutrality of semiconductors for better understanding.
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The main difference between bipolar and unipolar direct current (DC) is that in bipolar DC, the voltage can swing both positive and negative, whereas in unipolar DC, the voltage remains positive only. Bipolar DC is used in applications where both positive and negative voltages are needed, while unipolar DC is used when only positive voltage is required.
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collector has larger area than base and emitter because base collector is reverse biased hence current flow here due to minority carriers and the large power dissipation take place by the majority carriers this power dissipated in the form of heat. to cool the device from heat we made the larger area.
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Wave carriers are aircraft carriers that are being crushed by giant waves.
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Kid carriers are also known as baby carriers or child carriers. They are designed to safely and comfortably carry infants or young children while leaving the caregiver's hands free.
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Because in this device the resistance between two terminal respectively collector and emitter is changed by changing the base voltage that is it transfers the resistance between emitter and collector therefore it is called as TRANSISTOR. (TRANSFER OF RESISTOR)
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The minority counterpart to a committee chairperson is the ranking minority member
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Some carriers do have Starbucks on them, but not all.
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See related Link below.
Place your carriers using the AI Carriers program.
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Your sponsored law failed to pass as your vote was in the minority.
Will one ethnic minority inspire another?
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majority leaders: have majority support in his/her country.
minority: have minority support.
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The fractional change due to intensity on minority charge carriers is more than on majority charge carriers. When light is directly polarized it acts like a normal diode but when reverse polarized its current depends on the brightness (intensity of incident light).
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The term minority group refers to any religious or ethnic group that is in a minority in a wider society.
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