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MOSFET is Metal Oxide Semiconductor Field Effect Transistor.

IGFET Insulated Gate Field Effect Transistor.

But these expressions are practically synonyms.

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Single means there is just one. Dual means there are two IGBT's (Insulated Gate Bipolar Transistor) inside the one package.

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Transistor with 2 gate on top and bot of the channel

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Transistor is known as bipolar junction becoz it has 2 pole. Input is given to the 2 junction and output is taken from to junction

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In the case of Bipolar Junction Transistor current conduction is due to both holes and electrons. That's why noise is high in Bipolar Junction Transistor

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the gate is insulated from the channel by either a reverse biased junction or silicon dioxide.

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Yes, the are different names for the same thing.

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A bipolar transistor uses both majority and minority charge carriers for conduction, while a field effect transistor primarily relies on majority charge carriers. Field effect transistors have a higher input impedance compared to bipolar transistors. Additionally, bipolar transistors are current-operated devices, while field effect transistors are voltage-operated devices.

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The full form of igbt is insulated gate bipolar transistor.

it is constructed from the combining of both BJT and PMOSFET.

it has high input impedance and low on - state power loss .

it is free from second break down problem present in bjt...

it is also known as (MOSIGT), (COMFET)...

it is constructed virtualy in the same manner as a power

MOSFET.an IGBT has also thousand of basic structure cells

connected appropritely on a single chip of silicon.

it has a four substrate p,p+,n+,n-. respectively...

p+ substrate is called injection layer because it injects

holes into n- layer .n- layer is called drift region .

thickness of the n- layer determines the voltage blocking

capability of IGBT.

the p layer is called body of the IGBT.

WHERE IT IS USED : it is widely used in medium power

application such as DC and AC motors drives.

UPS SYSTEMS , RELAYS AND CONTACTORS.

In thyristor the gate is triggered the gate is losses its

control. ie if we remove the gate pulse after the thyristor

starts conducting it will not stop.

but in IGBT we can control the Gate. by applying reverse

voltage applied across it .

The Thyristors can not be switched beyond 1kHz where as

IGBTs can be switched upto 25kHz and even to 100KHz with

few soft switching techniques.

The thyristor can carry very high currents order of 3000A

but IGBT carries less current max of 1000A.

Thyristor commutation ,that is switching off is very

difficult. But there are applications of Thyristor with

natural commutation.

The IGBT can be switched on and off like a MOSFET. ie it is

voltage controlled device.

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because once saturated it will conduct current both way

raja TOQEER (Pakistan)

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through the used of multi-tester

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amplifier, switch, oscillator, etc.

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Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.

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A PNP transistor is a bipolar transistor formed by two opposing PN junctions in close proximity.

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The storage element of EEPROM is a floating gate transistor. This transistor can trap or release electrons, which alters the conductivity of the transistor and determines whether a binary value (0 or 1) is stored in a specific memory cell.

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Bipolar junction transistor(BJT)

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  • Vcc is used in bipolar transistor circuits
  • Vdd is used in field effect transistor circuits
  • B+ is used in vacuum tube circuits

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HEMT differs from BJT in following ways:

1. Unipolar device

2. Voltage Controlled device

3. Current is Controlled by Electric Field (FET)

4. 2 DEG is formed

5. High Mobility due to 2 DEG (Faster) etc

6. Source, Gate and Drain names for Emitter, Base, Collector

etc

M.A. Khan

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TTL stands for "transistor-transistor logic" and consists of using BJT's ("bipolar junction transistors") to conduct the logic for the circuit.

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BJT is Bipolar junction transistor FET is Field effect Transistor

It is a current controlled device It is voltage controlled device

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No. The Field Effect Transistor is a different technology than the Bipolar Junction Transistor. That cannot substitute for one another.

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depletion layer

depletion zone

juntion region

space charge region

bipolar transistor

field effect transistor

variable capacitance diode

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TTL stands for "transistor-transistor logic" and consists of using BJT's ("bipolar junction transistors") to conduct the logic for the circuit.

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A transistor acts like a resistor when Gate is connected to Source.

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A: Yes it can but why ?

This is frequently done when the diode is used for biasing purposes on another transistor and must be matched identically to the transistor's E-B junction characteristics. Thus 2 matched transistors are used with one just being used as a diode.

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BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.

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Yes people still use bipolar junction transistors today because of its high switching speed.

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Size, weight, cost, ruggedness, power consumption, efficiency, frequency limits. Apart from that there is only the ability to integrate and micro-miniaturise. i want to know the advantge bettwen bipolar and eft transistor

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A normal configuration for a BJT is Class A Common Emitter. In this configuration, the BJT operates as an inverting amplifier. Driven into saturation, it is a inverting switch, hence the designation NOT gate.
Transistor can act as a gate. But its not a gate. In BJT(Bipolar Junction Transister) type transisters there are two P-N juntions. That means if we need we can use it as a NOT gate. Actually gate ICs (Intergrated circuits) are also build using transistors. (Example : TTL(transister-transister logic))

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Transistor is called Bi-Polar device because the current can be flow due to electron and holes, hence it is called bipolar.

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In case of a bipolar junction transistor, we have only three terminals (legs). They are emitter, base and collector.

But, in case of a MOSFET (metal oxide semiconductor field effect transistor), we can have four legs. They are source, drain, gate and substrate. The substrate is not being shown in some notations of MOSFET. But it does exist. Hence, a MOSFET has four legs.

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The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.

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because once saturated it will conduct current both way

raja TOQEER (Pakistan)

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SBDT stands for Schottky Barrier Diode Transistor, which is a type of semiconductor device that combines the functions of a Schottky diode and a bipolar transistor in a single package.

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For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.

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For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.

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A circuit in which the input signal is applied to its base and the collector is earthed (grounded) is known as common collector configuration of BJT (BiPolar Junction Transistor)

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Sort of. The Bipolar Junction Transistor, or BJT, is a type of transistor. But the term transistor applies to a much wider family of components than just the Standard BJT. A rough list of the other common types of transistors includes:

Field effect transistors, or FETs, including both Junction types and Metal-oxide Semiconductor types: JFETs and MOSFETs. and also UJTs or unijunction transistors.

In a basic electronics course, though, if you say just 'transistors' it is assumed you mean BJTs.

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VCC is an electronics designation that refers to voltage from a power supply connected to the "collector" terminal of a bipolar transistor. In an NPN bipolar junction transistor, it would be +VCC, while in a PNP transistor, it would be VCC

More about sim card ....

https:// telecom-hyb.blogspot. com/2017/09/what-is-sim-card.html

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A Bipolar Junction

Transistor(a.k.a. a BJT or Bipolar

Transistor) is an active

semiconductor deviceformed by two

P-N junctionswhose function is amplification of an electric

current.

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