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In the case of Bipolar Junction Transistor current conduction is due to both holes and electrons. That's why noise is high in Bipolar Junction Transistor
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Transistor is known as bipolar junction becoz it has 2 pole. Input is given to the 2 junction and output is taken from to junction
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Yes, the are different names for the same thing.
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Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.
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The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
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Yes people still use bipolar junction transistors today because of its high switching speed.
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A circuit in which the input signal is applied to its base and the collector is earthed (grounded) is known as common collector configuration of BJT (BiPolar Junction Transistor)
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A PNP transistor is a bipolar transistor formed by two opposing PN junctions in close proximity.
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By testing the C B E terminals.
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TTL stands for "transistor-transistor logic" and consists of using BJT's ("bipolar junction transistors") to conduct the logic for the circuit.
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BJT is Bipolar junction transistor FET is Field effect Transistor
It is a current controlled device It is voltage controlled device
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No. The Field Effect Transistor is a different technology than the Bipolar Junction Transistor. That cannot substitute for one another.
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TTL stands for "transistor-transistor logic" and consists of using BJT's ("bipolar junction transistors") to conduct the logic for the circuit.
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A very high speed bipolar junction transistor having a metal-semiconductor emitter base junction instead of a semiconductor-semiconductor emitter base junction.
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Two junctions namely emitter-base junction and collector-base junction separates regions in a transistor.
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Sort of. The Bipolar Junction Transistor, or BJT, is a type of transistor. But the term transistor applies to a much wider family of components than just the Standard BJT. A rough list of the other common types of transistors includes:
Field effect transistors, or FETs, including both Junction types and Metal-oxide Semiconductor types: JFETs and MOSFETs. and also UJTs or unijunction transistors.
In a basic electronics course, though, if you say just 'transistors' it is assumed you mean BJTs.
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it is a bipolar junction transistor having p-type emitter & collector terminal and ,
n-type base terminal .
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A: Yes it can but why ?
This is frequently done when the diode is used for biasing purposes on another transistor and must be matched identically to the transistor's E-B junction characteristics. Thus 2 matched transistors are used with one just being used as a diode.
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A relay or repeater.
EDIT: The bipolar junction transistor
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Size, weight, cost, ruggedness, power consumption, efficiency, frequency limits. Apart from that there is only the ability to integrate and micro-miniaturise. i want to know the advantge bettwen bipolar and eft transistor
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In most discrete bipolar junction transistors the substrate is the collector. In monolithic integrated circuits the bipolar junction transistors are electrically isolated from the substrate, either by reversed biased junctions or insulator (e.g. sapphire). Some older bipolar junction transistor types (usually made with germanium) the substrate is the base. In bipolar point contact transistors the substrate was the base.
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Because it uses N-type and P-type semiconductor, usually silicon.
The construction will either be NPN or PNP, with the different types in a "sandwich" construction.
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It can be either a Bipolar Junction Transistor (NPN or PNP) or a Field Effect Transistor (N channel JFET, P channel JFET, N channel MOSFET, or P channel MOSFET).
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Assuming you mean a bipolar junction transistor (BJT):
1. Reverse bias on the collector-base junction.
2. Forward bias on the base-emitter junction, that is
3. Sufficient to give the correct operating point of collector voltage/collector current.
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The Kirk effect occurs at high current densities in bipolar junction transistors and causes a dramatic increase in the transit time of a transistor.
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BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
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Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
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bjt is bipolar device whr fet is unipolar....fet is input resistance thts y fet gain is less compared to bjt.....
The applications that will prefer bipolar junction transistors to field effect transistors are applications that require fast switching.
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FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
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- alpha is the common base current gain = Ic/Ie.
- beta is the common emitter current gain = Ic/Ib.
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VCC is an electronics designation that refers to voltage from a power supply connected to the "collector" terminal of a bipolar transistor. In an NPN bipolar junction transistor, it would be +VCC, while in a PNP transistor, it would be VCC
More about sim card ....
https:// telecom-hyb.blogspot. com/2017/09/what-is-sim-card.html
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The overdrive factor (ODF) of a bipolar junction transistor (BJT) is defined as the ratio of the excess minority carrier concentration in the base to the equilibrium minority carrier concentration. It indicates the level of injection of minority carriers into the base and is crucial for understanding the transistor's performance in different operating conditions. A higher ODF typically leads to improved current gain and higher frequency response, but it can also increase the risk of saturation. In practice, the ODF helps in analyzing the transistor's behavior under varying bias conditions.
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In order to bias a bipolar junction transistor on, you need to forward bias the base-emitter junction at the same time you forward bias the collector-emitter junction, and the ratio of collector current over base current must be somewhat less than hFe, the transistor's gain. This is known as saturated, or non-linear mode, operation. In practice, we drive the base much harder than the calculated required current, so as to minimize dependency on varying hFe's for various transistors.
Turning the transistor off is a simple matter of eliminating the base current.
In the case of the NPN transistor, the base and collector would need to be more positive than the emitter. In the case of the PNP, they would need to be more negative.
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No. A unijunction transistor (UJT) is entirely different in design and application than a bipolar junction transistor (BJT). The UJT works on the principle of voltage modulation of the effective substrate resistance, while the BJT works on the principle of current amplification from one junction to the other, usually base-emitter to collector-emitter.
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a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
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To know if a transistor is PNP or an NPN,the following should be verified:
- For a PNP transistor, the base-collector junction is forward biased while the base-emitter junction is reversed biased.
- For an NPN transistor, the base-emitter junction is forward biased while the base -collector junction is reversed biased.
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A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION.
And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow.
If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit.
But the question stated "transistor", which is understood to be a BJT.
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A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION.
And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow.
If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit.
But the question stated "transistor", which is understood to be a BJT.
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In an NPN transistor an emiter follower refers to an amplifier topology. The emiter follower configuration is when the emitter of a N-Type Bipolar Junction Transistor (BJT) is connected to the common point on a circuit (typically ground). This is not always the case, however, because many amplifier configuration exist.
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triode ....is not the answer
point contact is the answer
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